august 2012 FDMS030N06B n-channel powertrench ? mosfet ?2012 fairchild semiconductor corporation FDMS030N06B rev. c0 www.fairchildsemi.com 1 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FDMS030N06B units v dss drain to source voltage 60 v v gss gate to source voltage 20 v i d drain current - continuous (t c = 25 o c) (note1) 100 a - continuous (t a = 25 o c) (note 2a) 22.1 i dm drain current - pulsed (note 3) 400 a e as single pulsed avalanche energy (note 4) 248 mj p d power dissipation (t c = 25 o c) 104 w (t a = 25 o c) (note 2a) 2.5 w t j , t stg operating and storage temperature range -55 to +150 o c symbol parameter FDMS030N06B units r ? jc thermal resistance, junction to case, max 1.2 o c/w r ? ja thermal resistance, junction to ambient, max (note 2a) 50 FDMS030N06B n-channel powertrench ? mosfet ? 60v, 100a, 3m ? features ?r ds(on) = 2.4m ? (typ.)@ v gs = 10v, i d = 50a ? advanced package and silicon combination for low r ds(on) and high efficiency ? fast switching speed ? 100% uil tested ? rohs compliant description this n-channel mosfet is pr oduced using fairchild semicon- ductor?s advanced powertrench process that has been espe- cially tailored to minimize the on-state resistance and yet maintain superior switching performance. application ? dc to dc converters ? synchronous rectification for server / telecom psu ? battery charger ? ac motor drives and uninterruptible power supplies ?off-line ups bottom power 56 top d d d d g s s s pin 1 g s s s d d d d 5 6 7 8 3 2 1 4
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 2 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FDMS030N06B FDMS030N06B power 56 13 ? 12 mm 3000 units symbol parameter test conditions min. typ. max. units bv dss drain to source breakdown voltage i d = 250 ? a, v gs = 0v 60 - - v ? bv dss ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 o c - 0.03 - v/ o c i dss zero gate voltage drain current v ds = 48v, v gs = 0v - - 1 ? a i gss gate to body leakage current v gs = 20v, v ds = 0v - - 100 na v gs(th) gate threshold voltage v gs = v ds , i d = 250 ? a 2.5 3.3 4.5 v r ds(on) static drain to source on resistance v gs = 10v, i d = 50a - 2.4 3.0 m ? g fs forward transconductance v ds = 10v, i d = 50a -119- s c iss input capacitance v ds = 30v, v gs = 0v f = 1mhz - 5685 7560 pf c oss output capacitance - 1720 2290 pf c rss reverse transfer capacitance - 59 - pf c oss (er) engry releted output capacitance v ds = 30v, v gs = 0v - 2504 - pf q g(tot) total gate charge at 10v v ds = 30v, i d = 50a v gs = 0v to 10v (note 5) -75-nc q gs gate to source gate charge - 30 - nc q gd gate to drain ?miller? charge - 14 - nc v plateau gate plateau volatge - 5.4 - v q sync total gate charge sync. v ds = 0v, i d = 50a (note 6) - 66.2 - nc q oss output charge v ds = 30v, v gs = 0v - 174 - nc t d(on) turn-on delay time v dd = 30v, i d = 50a v gs = 10v, r gen = 4.7 ? (note 5) -3988ns t r turn-on rise time - 20 50 ns t d(off) turn-off delay time - 52 114 ns t f turn-off fall time - 16 42 ns esr equivalent series resistance f = 1mhz - 1.05 - ? i s maximum continuous drain to source diode forward current - - 100 a i sm maximum pulsed drain to source diode forward current - - 400 a v sd drain to source diode forward voltage v gs = 0v, i sd = 50a - - 1.25 v t rr reverse recovery time v gs = 0v, i sd = 50a di f /dt = 100a/ ? s -71-ns q rr reverse recovery charge - 85 - nc notes: 1. silicon limited i d rating = 147a 2. r ? ja is determined with the device mounted on a 1in 2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of fr-4 material. r ? jc is guaranteed by design while r ? ca is determined by the user's board design. 3. repetitive rating: pulse width li mited by maximum junction temperature 4. l = 0.3mh, i as = 40.7a, v dd = 50v, v gs = 10v starting t j = 25 ? c 5. essentially independent of operating temperature typical characteristics 6. see the test circuit in page 8 a. 50 c/w when mounted on a 1 in 2 pad of 2 oz copper. b. 125 c/w when mounted on a minimum pad of 2 oz copper.
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 3 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 34567 1 10 100 500 -55 o c 150 o c *notes: 1. v ds = 10v 2. 250 ? s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.05 0.1 1 3 1 10 100 200 *notes: 1. 250 ? s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 15.0v 10.0v 8.0v 7.0v 6.5v 6.0v 5.5v 5.0v 0 50 100 150 200 1.0 1.5 2.0 2.5 3.0 3.5 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ m ? ] , drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 500 *notes: 1. v gs = 0v 2. 250 ? s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 0 153045607590 0 2 4 6 8 10 *note: i d = 50a v ds = 12v v ds = 30v v ds = 48v v gs , gate-source voltage [v] q g , total gate charge [nc] 0.1 1 10 60 10 100 1000 10000 c oss c iss c iss = c gs + c gd ( c ds = shorted ) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v]
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 4 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe oper ating area figure 10. maximum drain current vs. ambient temperature figure 11. eoss vs. drain to source voltage figure 12. unclamped inductive switching capability -80 -40 0 40 80 120 160 0.94 0.96 0.98 1.00 1.02 1.04 1.06 *notes: 1. v gs = 0v 2. i d = 250 ? a bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c ] -80 -40 0 40 80 120 160 0.6 0.8 1.0 1.2 1.4 1.6 1.8 *notes: 1. v gs = 10v 2. i d = 50a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c ] 25 50 75 100 125 150 0 30 60 90 120 150 i d , drain current [a] t c , case temperature [ o c ] v gs = 10v r ? jc = 1.2 o c/w 0.01 0.1 1 10 100 0.01 0.1 1 10 100 1000 1ms 10ms 100ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t a = 25 o c 2. t j = 150 o c 3. single pulse dc 0 102030405060 0 0.5 1.0 1.5 2.0 2.5 3.0 e oss , [ ? j ] v ds , drain to source voltage [ v ] 0.001 0.01 0.1 1 10 100 1,000 1 10 100 t j = 25 o c t j = 125 o c i as , avalanche current [a] t av , time in avalanche [ms]
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 5 typical performance characteristics (continued) figure 13. transient thermal response curve 0.01 0.1 1 10 100 1000 0.001 0.01 0.1 1 2 0.01 0.1 0.2 0.05 0.02 *notes: 1. z ? ja (t) = 125 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z ? jc (t) 0.5 single pulse normalized thermal impedance [z ? ja ] rectangular pulse duration [sec] t 1 p dm t 2
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 6 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 7 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 8 total gate charge qsync. test circuit & waveforms
FDMS030N06B n-channel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 9 dimensional outlin e and pad layout
FDMS030N06B n-chan nel powertrench ? mosfet FDMS030N06B rev. c0 www.fairchildsemi.com 10 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes withou t further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of the application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written appro val of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a signi ficant injury of the user. 2. a critical component in any compo nent of a life su pport, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? accupower? ax-cap?* bitsic ? build it now? coreplus? corepower? crossvolt ? ctl? current transfer logic? deuxpeed ? dual cool? ecospark ? efficentmax? esbc? fairchild ? fairchild semiconductor ? fact quiet series? fact ? fast ? fastvcore? fetbench? flashwriter ? * fps? f-pfs? frfet ? global power resource sm green bridge? green fps? green fps? e-series? g max ? gto? intellimax? isoplanar? marking small speakers sound louder and better? megabuck? microcoupler? microfet? micropak? micropak2? millerdrive? motionmax? motion-spm? mwsaver? optohit? optologic ? optoplanar ? powertrench ? powerxs? programmable active droop? qfet ? qs? quiet series? rapidconfigure? saving our world, 1mw/w/kw at a time? signalwise? smartmax? smart start? solutions for your success? spm ? stealth? superfet ? supersot?-3 supersot?-6 supersot?-8 supremos ? syncfet? sync-lock? ?* the power franchise ? ? tinyboost? tinybuck? tinycalc? tinylogic ? tinyopto? tinypower? tinypwm? tinywire? transic ? trifault detect? truecurrent ? * ? serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product de velopment. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supple mentary data will be published at a later date. fairchild semiconductor reserves the ri ght to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor pa rts is a growing problem in the industry. all manufactures of semicon ductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing dela ys. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchil d strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by c ountry on our web page cited above. products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and ou r authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?
|
